common brand: Infineon

types

transistor-array-dat

common used

  • S8550 == 2TY
  • S9012 == 2T1
  • SS8050 == Y1

more NPN

MMBTH10 - 25V NPN VHF/UHF TRANSISTOR IN SOT23

S8050

  • relay-dat drive

  • S8050 SOT-23 footprint = BC817

pin name common
1 base io input
2 emittor gnd
3 collector output

SOT89 transistor

D965A - LOW VOLTAGE HIGH CURRENT TRANSISTOR 2SD965A

FEATURES

  • Collector current up to 5A
  • Collector-Emitter voltage up to 30V

infineon

IRLML6244

  • irlml6244-DS
  • 20V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package

transistor array

dual transistor package

BCR 10PN H6327

  • Two (galvanic) internal isolated NPN/PNP Transistors in one package
  • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)
  • URL

other

1HT251 NPN Silicon Planar Low Power Transistor Array == 4x

BSS138

Differences Between BSS138 and BSS138W

Feature BSS138 BSS138W
Device Type N-Channel MOSFET N-Channel MOSFET
V_DS (Drain–Source) Max 50 V 50 V
I_D (Continuous Drain) ~200 mA (at 25°C) ~200 mA (at 25°C)
R_DS(on) ~3–5 Ω @ V_GS = 4.5 V ~3–5 Ω @ V_GS = 4.5 V
Gate Threshold (V_GS(th)) 0.7–1.3 V 0.7–1.3 V
Package SOT-23 (larger) SOT-323 / SC-70 (smaller)
Size / Footprint 2.9 × 1.3 mm (approx.) 2.0 × 1.25 mm (approx.)
Thermal Dissipation Better (due to bigger package) Lower (due to smaller package)
Pinout Same function (G, D, S) Same function (G, D, S)

Key Points

  • Electrical specs are essentially identical → Both are 50V N-channel enhancement MOSFETs.
  • Main difference = package size:
    • BSS138 → SOT-23, larger, easier to hand-solder, better thermal handling.
    • BSS138W → SOT-323 (SC-70), much smaller, designed for high-density PCBs.
  • Thermal performance: BSS138 can dissipate a bit more heat than BSS138W.

👉 If space is tight → BSS138W.
👉 If you want easier soldering and better heat dissipation → BSS138.

high power transistor

用于继电器驱动电路，高速转换电路，及其它大电流开关电路。

Relay drivers, high-speed inverters, general high-current switching applications.

un-sorted

  • G1 == 5551 2N5551 丝印G1 MMBT5551LT1G NPN 贴片三极管SOT-23

  • 2L == 2N5401 丝印2L MMBT5401LT1G SOT-23 贴片三极管

  • BCR116E6327 == Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ) == Infineon == BCR 116 E6327

  • IRFML8244TRPBF

  • IRLML9303

  • BC817-40W - 45 V, 0.5 A, General Purpose NPN Transistor

PBSS5350Z - 50 V, 3 A PNP low VCEsat transistor

MMBT3904

LSF0204GU12 - 4-bit bidirectional multi-voltage level translator; open-drain; push-pull

30BS transistor

ref

Table of Contents

https://www.electrodragon.com