model selections

Model Mark Manufacturers Id Package CH type Descriptions
AOD403 D403 AOSMD-dat 40A TO-252 N 40V N-Channel MOSFET
AOD4184A 4184 AOSMD-dat 50A TO-252 N 40V N-Channel MOSFET
IRF540N 540N Infineon-dat 33A TO-220AB N 100V N-Channel MOSFET
NCE6050   ncepower-dat 50A TO-252-2 N 60V N-Channel Enhancement Mode Power MOSFET
AO3401 A19T AOSMD-dat 4.3A SOT-23 P 30V P-Channel MOSFET
2N7002 7002 NXP-dat 115mA SOT-23 N 60V N-Channel MOSFET
SI2300   Vishay-dat 2.8A SOT-23 P 20V P-Channel MOSFET
SI2301   Vishay-dat 2.8A SOT-23 P 20V P-Channel MOSFET
SI2302   Vishay-dat 3.1A SOT-23 N 20V N-Channel MOSFET
SI2307   Vishay-dat 3.7A SOT-23 N 30V N-Channel MOSFET
IR F5305 5305 Infineon-dat 31A TO-220AB P 55V P-Channel MOSFET
IR FR1205   Infineon-dat 33A D2PAK N 55V N-Channel MOSFET

dual channel

Model Mark Manufactuers Descriptions
IRF8313   Infineon-dat  

high power mosfet

circuit guides

load switching

Power switching is better with N-type devices

Because N-type transistors in general can carry more current than P-types, they are preferable for switching heavy loads. Low-side switching with N-type devices is easier than high-side switching and can often be done by microcontroller ports without the need for special drivers.

Using an N-type transistor for high-side switching is possible but requires a control voltage higher than the load voltage connected to the source/emitter. Some sort of charge pump is needed to pull the gate/base above the source/emitter voltage. This complicates the design, not only making it more expensive but also increasing its sensitivity to noise and interference. Controlling such a high-side switch using PWM can be problematic because of the charge pump.

  • ref - https://www.elektormagazine.com/articles/high-side-low-side-switching

Parallel using Mosfet for higher performance

P-mosfet

gate status source drain
OFF ON - -
ON OFF - -

ref

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