mosfet-dat
model selections
| Model | Mark | Manufactuers | CH type | Descriptions | |
|---|---|---|---|---|---|
| AOD403 | D403 | AOSMD-dat | |||
| AOD4184A | 4184 | AOSMD-dat | N | 40V N-Channel MOSFET | |
| IRF540N | [Infineon-dat | ||||
| NCE6050 | ncepower-dat | TO-252-2 | N | NCE N-Channel Enhancement Mode Power MOSFET | |
| AO3401 | A19T | AOSMD-dat | |||
| 2N7002 | 7002 | N | |||
| SI2301 | |||||
| SI2307 | |||||
| IRF5305 | 5305 | Infineon-dat | |||
| IRFR1205 | IOR-dat |
dual channel
| Model | Mark | Manufactuers | Descriptions |
|---|---|---|---|
| IRF8313 | Infineon-dat |
high power mosfet
circuit guides
load switching
Power switching is better with N-type devices
Because N-type transistors in general can carry more current than P-types, they are preferable for switching heavy loads. Low-side switching with N-type devices is easier than high-side switching and can often be done by microcontroller ports without the need for special drivers. Using an N-type transistor for high-side switching is possible but requires a control voltage higher than the load voltage connected to the source/emitter. Some sort of charge pump is needed to pull the gate/base above the source/emitter voltage. This complicates the design, not only making it more expensive but also increasing its sensitivity to noise and interference. Controlling such a high-side switch using PWM can be problematic because of the charge pump.
- ref - https://www.elektormagazine.com/articles/high-side-low-side-switching
Parallel using Mosfet for higher performance
