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BOM-DAT/mosfet-dat/2024-10-06-15-13-53.png
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BOM-DAT/mosfet-dat/mosfet-dat.md
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2 | 2 | # mosfet-dat |
3 | 3 | |
4 | 4 | |
5 | -| Model | Mark | Manufactuers | | Descriptions | |
|
6 | -| -------- | ---- | ----------------- | -------- | ------------------------------------------- | |
|
7 | -| AOD403 | D403 | [[AOSMD-dat]] | | | |
|
8 | -| AOD4184A | 4184 | [[AOSMD-dat]] | | 40V N-Channel MOSFET | |
|
9 | -| IRF540N | | [[[Infineon-dat]] | | | |
|
10 | -| NCE6050 | | [[ncepower-dat]] | TO-252-2 | NCE N-Channel Enhancement Mode Power MOSFET | |
|
11 | -| AO3401 | A19T | [[AOSMD-dat]] | | | |
|
12 | -| 2N7002 | 7002 | | | | |
|
13 | -| SI2301 | | | | | |
|
14 | -| SI2307 | | | | | |
|
15 | -| IRF5305 | 5305 | [[Infineon-dat]] | | |
|
16 | -| IRFR1205 | | [[IOR-dat]] | | |
|
17 | - |
|
18 | - |
|
19 | -## dual channel |
|
5 | + |
|
6 | +## model selections |
|
7 | + |
|
8 | + |
|
9 | +| Model | Mark | Manufactuers | | CH type | Descriptions | |
|
10 | +| -------- | ---- | ----------------- | -------- | ------- | ------------------------------------------- | |
|
11 | +| AOD403 | D403 | [[AOSMD-dat]] | | | | |
|
12 | +| AOD4184A | 4184 | [[AOSMD-dat]] | | N | 40V N-Channel MOSFET | |
|
13 | +| IRF540N | | [[[Infineon-dat]] | | | | |
|
14 | +| NCE6050 | | [[ncepower-dat]] | TO-252-2 | N | NCE N-Channel Enhancement Mode Power MOSFET | |
|
15 | +| AO3401 | A19T | [[AOSMD-dat]] | | | | |
|
16 | +| 2N7002 | 7002 | | | N | | |
|
17 | +| SI2301 | | | | | | |
|
18 | +| SI2307 | | | | | | |
|
19 | +| IRF5305 | 5305 | [[Infineon-dat]] | | | |
|
20 | +| IRFR1205 | | [[IOR-dat]] | | | |
|
21 | + |
|
22 | + |
|
23 | +### dual channel |
|
20 | 24 | |
21 | 25 | | Model | Mark | Manufactuers | Descriptions | |
22 | 26 | | ------- | ---- | ---------------- | ------------ | |
23 | 27 | | IRF8313 | | [[Infineon-dat]] | |
24 | 28 | |
25 | 29 | |
26 | -## high power mosfet |
|
30 | +### high power mosfet |
|
27 | 31 | |
28 | 32 | ![](2024-08-28-14-43-36.png) |
29 | 33 | |
34 | + |
|
35 | +## circuit guides |
|
36 | + |
|
37 | + |
|
38 | +### load switching |
|
39 | + |
|
40 | +![](2024-10-06-15-13-53.png) |
|
41 | + |
|
42 | +### Power switching is better with N-type devices |
|
43 | + |
|
44 | +Because N-type transistors in general can carry more current than P-types, they are preferable for switching heavy loads. Low-side switching with N-type devices is easier than high-side switching and can often be done by microcontroller ports without the need for special drivers. Using an N-type transistor for high-side switching is possible but requires a control voltage higher than the load voltage connected to the source/emitter. Some sort of charge pump is needed to pull the gate/base above the source/emitter voltage. This complicates the design, not only making it more expensive but also increasing its sensitivity to noise and interference. Controlling such a high-side switch using PWM can be problematic because of the charge pump. |
|
45 | + |
|
46 | +- ref - https://www.elektormagazine.com/articles/high-side-low-side-switching |
|
47 | + |
|
48 | + |
|
49 | + |
|
50 | + |
|
30 | 51 | ## Parallel using Mosfet for higher performance |
31 | 52 | |
32 | 53 | ![](2024-08-28-14-44-40.png) |
Board-dat/NWI/NWI1100-dat/NWI1100-dat.md
... | ... | @@ -9,6 +9,15 @@ https://www.electrodragon.com/product/esp32-devkitc/ |
9 | 9 | |
10 | 10 | ![](20-34-18-09-08-2023.png) |
11 | 11 | |
12 | +legacy wiki page |
|
13 | + |
|
14 | +- https://w.electrodragon.com/w/Category:ESP32#Specification_and_ordering_information |
|
15 | + |
|
16 | +- https://w.electrodragon.com/w/ESP32#Documents |
|
17 | + |
|
18 | +- broken link - https://www.espressif.com.cn/en/support/download/documents?keys&field_type_tid%5B%5D=13 |
|
19 | + |
|
20 | + |
|
12 | 21 | ## Schematic |
13 | 22 | |
14 | 23 | ![](2024-08-05-18-36-06.png) |
Chip-dat/74xx-dat/74HC595-dat/74HC595-dat.md
... | ... | @@ -36,11 +36,70 @@ optional |
36 | 36 | - When the output-enable (OE) input is high, the outputs are in the high-impedance state. |
37 | 37 | |
38 | 38 | |
39 | +## low power alternative versions |
|
40 | + |
|
41 | +If you're looking for low-power alternatives to the 74HC595 shift register, here are a few options: |
|
42 | + |
|
43 | +74LV595: |
|
44 | + |
|
45 | +- This is a Low Voltage CMOS version, designed for low-power applications. |
|
46 | +- It operates in a voltage range of 2V to 5.5V and consumes less power compared to the 74HC595. |
|
47 | + |
|
48 | +74LVC595: |
|
49 | + |
|
50 | +- The LVC series offers even lower power consumption. |
|
51 | +- It supports a voltage range of 1.65V to 3.6V, making it suitable for battery-powered or low-power designs. |
|
52 | + |
|
53 | +TLC6C5912: |
|
54 | + |
|
55 | +- A low-power constant-current shift register, often used for driving LEDs with better energy efficiency. |
|
56 | + |
|
57 | +TPIC6B595: |
|
58 | + |
|
59 | +- An enhanced version of the 74HC595, integrating current-driving capabilities while consuming lower power for driving loads. |
|
60 | + |
|
61 | + |
|
62 | + |
|
63 | +## 74LV595 vs 75HC595 |
|
64 | + |
|
65 | +The 74LV595 is a low-voltage CMOS version of the 74HC595, and it can indeed save power, especially in lower voltage operations. Here's a general comparison between the two in terms of power savings: |
|
66 | + |
|
67 | +1. Supply Voltage: |
|
68 | + |
|
69 | +- 74HC595 operates at 2V to 6V, but is typically used at 5V. |
|
70 | +- 74LV595 operates at 2V to 5.5V and is optimized for lower voltage, typically 3.3V or even lower. |
|
71 | + |
|
72 | +2. Power Consumption (at 5V supply): |
|
73 | + |
|
74 | +- 74HC595: The typical quiescent current (static power consumption) is about 80 µA at 5V. |
|
75 | +- 74LV595: The typical quiescent current is much lower, around 4 µA at 5V, and even less at lower voltages (about 1 µA at 3.3V). |
|
76 | + |
|
77 | +3. Dynamic Power Consumption: |
|
78 | + |
|
79 | +- For both chips, dynamic power consumption depends on the switching frequency, load capacitance, and operating voltage. |
|
80 | +74LV595 consumes less dynamic power compared to 74HC595 because lower operating voltage results in reduced power dissipation during switching. |
|
81 | + |
|
82 | +### Power Savings Estimate: |
|
83 | + |
|
84 | +If you're operating at 3.3V or lower: |
|
85 | + |
|
86 | +- 74LV595 will consume significantly less power. For example, at 3.3V, the power consumption can be 5 to 10 times lower compared to 74HC595 at 5V. |
|
87 | +- If your system can operate at 3.3V or less, switching to 74LV595 can provide substantial power savings, both in terms of static and dynamic power consumption. The exact savings depend on your operating voltage and switching frequency, but a reduction in quiescent current from 80 µA to 1-4 µA gives you a good idea of the potential savings. |
|
88 | + |
|
89 | + |
|
90 | + |
|
39 | 91 | ## code |
40 | 92 | |
41 | 93 | - [[py-595-demo-1.py]] - [[py-595-demo-2.py]] |
42 | 94 | |
43 | 95 | |
96 | + |
|
97 | +## DS |
|
98 | + |
|
99 | +- 74LV595 = https://atta.szlcsc.com/upload/public/pdf/source/20240724/57831ADF1CCBDDE5BAC2EF77A030A2A0.pdf |
|
100 | +- 74HC595 - https://assets.nexperia.com/documents/data-sheet/74HC_HCT595.pdf |
|
101 | + |
|
102 | + |
|
44 | 103 | ## ref |
45 | 104 | |
46 | 105 | - [[74xx-dat]] |
Chip-dat/74xx-dat/74xx-dat.md
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6 | 6 | |
7 | 7 | ## 74HC165D |
8 | 8 | |
9 | -![](2024-09-20-11-33-37.png) |
|
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0 | +![](2024-09-20-11-33-37.png) |
|
1 | + |
|
2 | + |
|
3 | +- [[74hc595-dat]] |
|
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Chip-dat/chip-dat.md
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8 | 8 | |
9 | 9 | - [[allegro-dat]]: [[ACS712-dat]] |
10 | 10 | |
11 | +- [[74xx-dat]] |
|
12 | + |
|
13 | + |
|
11 | 14 | ## ref |
12 | 15 | |
13 | 16 | - [[chip]] - [[chip-cn]] |
Tech-dat/power-dat/power-dat.md
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1 | 1 | |
2 | 2 | # power-dat.md |
3 | 3 | |
4 | +1. design: [[power-dat]] |
|
5 | + |
|
6 | +1. consider power jack [[power-jack-dat]] |
|
7 | + |
|
8 | +2. [[power-protection-dat]] |
|
9 | + |
|
10 | +## Info |
|
11 | + |
|
4 | 12 | - [[breadboard-power-dat]] |
5 | 13 | |
6 | 14 | - [[wireless-charge-dat]] |
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16 | 24 | | ----- | ------------ | ---- | |
17 | 25 | |
18 | 26 | |
27 | +## Power selection |
|
19 | 28 | |
29 | +By switching from 5V to 3.3V, you can achieve up to 34% power savings in circuits where the current remains the same. In practice, the actual savings may be higher because some components draw less current at lower voltages. |
|
20 | 30 | |
21 | 31 | |
22 | 32 |
Tech-dat/power-dat/power-jack-dat/power-jack-dat.md
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1 | + |
|
2 | +# power-jack-dat |
|
3 | + |
|
4 | +- https://www.electrodragon.com/product/20pcs-dc-5-5mm-female-pcb-power-jack-pole/ |
|
5 | + |
|
6 | +- plug-head: https://www.electrodragon.com/product/dc-power-jack-male/ |
|
7 | + |
|
8 | + |
|
9 | +- [[CCO3546-dat]] - [[CCO3548-dat]] - [[CCO3527-dat]] |
|
10 | + |
|
11 | + |
Tech-dat/protection-dat/power-portection-dat/power-portection-dat.md
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1 | + |
|
2 | +# power-portection-dat |
|
3 | + |
|
4 | +## reverse connection |
|
5 | + |
|
6 | +In circuit board design, protecting against reverse polarity (reverse connection) is crucial to prevent damage to components or the entire circuit when the power supply is connected incorrectly. Here are some common methods for reverse polarity protection: |
|
7 | + |
|
8 | +### Diode-Based Protection: |
|
9 | + |
|
10 | +Series Diode: Place a diode in series with the power line (Vcc or GND). When the power is connected correctly, the diode conducts, allowing current to flow. If the power is reversed, the diode blocks the current. The downside is a voltage drop across the diode (about 0.7V for a silicon diode or 0.2V for a Schottky diode), which can affect power efficiency. |
|
11 | +Parallel Diode with Fuse: A diode is connected in reverse across the power input. If the power is connected incorrectly, the diode conducts and shorts the power supply. A fuse is used in series to blow and cut off the current, protecting the circuit. However, the fuse needs replacement after it blows. |
|
12 | + |
|
13 | +### P-Channel MOSFET Reverse Protection: |
|
14 | + |
|
15 | +A P-channel MOSFET is placed between the positive power input and the circuit. When the power is connected correctly, the source of the MOSFET is at a higher potential than the gate, so the MOSFET conducts. If the power is reversed, the MOSFET is turned off, preventing current from flowing. This method is highly efficient with minimal voltage drop. |
|
16 | + |
|
17 | +- [[mosfet-dat]] |
|
18 | + |
|
19 | + |
|
20 | +### and for N-channel Mosfet: Correct Low-Side N-Channel MOSFET Configuration: |
|
21 | + |
|
22 | +- Source: Should be connected to ground (or the negative side of the load). |
|
23 | +- Drain: Should be connected to the negative side of the load. |
|
24 | +- Gate: Needs to be driven by a voltage higher than the source (which is ground in this case) to turn the MOSFET on. |
|
25 | + |
|
26 | +### Dedicated Reverse Polarity Protection IC: |
|
27 | + |
|
28 | +There are integrated circuits (ICs) specifically designed for reverse polarity protection, such as Maxim Integrated's MAX1614. These ICs typically include detection and switching functions, automatically disconnecting the power when reverse polarity is detected. |
|
29 | + |
|
30 | +### Physical Connector Design: |
|
31 | + |
|
32 | +Using connectors that are physically asymmetric, like USB-C or polarized DC jacks, ensures that the power supply can only be connected in the correct orientation. This is a straightforward method to prevent reverse polarity. |
|
33 | + |
|
34 | + |
|
35 | +## Circuit Protection |
|
36 | + |
|
37 | + |
|
38 | + |
|
39 | +To prevent damage to downstream circuits, several design strategies and protective measures can be implemented to guard against overcurrent, overvoltage, and other fault conditions. Here are some common approaches: |
|
40 | + |
|
41 | +1. Overcurrent Protection: (OC) |
|
42 | + |
|
43 | +**Fuse**: A traditional protection component that cuts off current when it blows. It’s suitable for one-time protection but requires replacement after activation. |
|
44 | + |
|
45 | +**Resettable Fuse (PTC)**: A PTC (positive temperature coefficient) fuse increases its resistance when too much current flows. Once the fault clears, it resets itself. This is useful for repeated protection. |
|
46 | + |
|
47 | +**Current-Limiting Resistor**: A simple resistor can limit the amount of current flowing to downstream circuits. This is a basic solution but may affect performance. |
|
48 | + |
|
49 | +**Overcurrent Detection and Shutdown (Current-Sensing Circuit)**: Using a current-sensing circuit (e.g., a shunt resistor + op-amp), it detects when the current exceeds a threshold and shuts down the power with a MOSFET or relay. |
|
50 | + |
|
51 | +2. Overvoltage Protection: (OV) |
|
52 | + |
|
53 | +**TVS Diode (Transient Voltage Suppression Diode)**: A TVS diode is placed across the power line. When the voltage spikes, it clamps the excess voltage to a safe level, protecting the circuit. |
|
54 | + |
|
55 | +**Zener Diode**: A Zener diode can regulate voltage. When the input voltage exceeds its breakdown voltage, it conducts and clamps the voltage to protect the circuit. |
|
56 | + |
|
57 | +**Voltage Detection IC**: These ICs monitor the input voltage, and if it exceeds safe limits, they either shut down the power or trigger a protection mechanism. |
|
58 | + |
|
59 | +3. Overtemperature Protection: (OT) |
|
60 | + |
|
61 | +**Thermistors (NTC/PTC)**: Thermistors change resistance with temperature. In case of overheating, their resistance increases, limiting current flow or triggering protective circuits. |
|
62 | + |
|
63 | +**Temperature-Sensing ICs**: Temperature sensors (e.g., NTC, PTC, or specialized ICs) monitor real-time temperature. If it exceeds a threshold, they shut down the load or power source to protect the circuit. |
|
64 | + |
|
65 | +4. Inrush Current Protection: |
|
66 | + |
|
67 | +**Soft-Start Circuit**: Using MOSFETs and capacitors, this circuit gradually ramps up the power, preventing large inrush currents when the circuit first powers on. |
|
68 | + |
|
69 | +**NTC Inrush Current Limiter:** An NTC thermistor initially limits the inrush current. As the circuit stabilizes, its resistance decreases, allowing normal current flow. |
|
70 | + |
|
71 | +5. Isolation Protection: |
|
72 | + |
|
73 | +**Optocouplers**: Optocouplers provide signal isolation between circuits, preventing high voltage or abnormal signals from damaging downstream components. |
|
74 | + |
|
75 | +**Transformer Isolation**: Transformers can isolate power circuits, protecting the downstream components from high voltage spikes or electrical noise. |
|
76 | + |
|
77 | +6. Undervoltage Protection: |
|
78 | + |
|
79 | +**Undervoltage Lockout (UVLO) Circuit**: This circuit disconnects power when the input voltage falls below a safe operating range, preventing malfunctions or damage due to insufficient power. |
|
80 | + |
|
81 | +7. Reverse Polarity Protection: |
|
82 | + |
|
83 | +**MOSFET Reverse Polarity Protection**: Using a P-channel or N-channel MOSFET can prevent damage if the power is connected in reverse, as the MOSFET will automatically block current flow in the wrong direction. |
|
84 | + |
|
85 | +8. Using Protection ICs: |
|
86 | + |
|
87 | +There are integrated circuits specifically designed for power protection, offering multiple safeguards like overvoltage, overcurrent, overtemperature, and short-circuit protection. An example is the TPS series from Texas Instruments, which simplifies the design with built-in protections. |
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